Effect of Doping with Oxygen and Tellurium on the Intrinsic-Defect Structure of CdS and ZnSe

Inorganic Materials

Volumn 32, Issue 5, 1996, Pages 481-484

  Morozova, N K ^a   Nazarova, L D ^a   Butnev, K N ^a  

^a MOSCOW POWER ENGINEERING INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2742571816     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. Kröger, F.A., The Chemistry of Imperfect Crystals, Amsterdam: North-Holland, 1964.
2. Gurvich, A.M., Vvedenie v fizicheskuyu khimiyu kristallofosforov (Introduction to the Physical Chemistry of Phosphors), Moscow: Vysshaya Shkola, 1982.
3. Morozova, N.K., Morozov, A.V., and Zimogorskii, V.S., On Oxysen Solubility in CdS, Neorg. Mater., 1993, vol 29, no. 7, pp. 1014-1019.
4. Pashenko, Yu.A., Optical Properties of Oxygen-Containing Zinc Selenide, Cand. Sc. (Phys.-Math.) Dissertation, Moscow, 1986.
5. Morozova, N.K., Nazarova, L.D., and Morozov, A.V., Analysis of Defect Formation in CdS, Izy. Vyssh. Uchebn. Zaved., Fiz., 1993, vol. 36, no. 1. p. 127.
6. Morozova, N.K., Nazarova, L.D., Karetnikov, I.A., et al., Excitonic Spectrum of CdS with Controlled Stoichiometry and Oxygen Concentration, Zh. Prikl. Spekrrosk., 1994. vol. 60, nos. 3-4, pp. 341-348.
7. Teplitskii, V.A. and Aivazov, A.A., Mass Transport in CdS under Controlled Vapor Pressure of Constituent Components, in Poluprovodnikovye materialy i protsessy mikroelektroniki (Semiconductor Materials and Technology in Microelectronics), Moscow: Mosk. Inst. Elektronnoi Tekhnologii, 1988, pp. 125-137.
8. Morozova, N.K., Effect of Intrinsic Point Defects and Oxygen on the Stability of the Properties of Laser Crystals, in Shumovye i degradatsionnye protsessy v poluprovodnikakh (Noise and Degradation in Semiconductors), Moscow: Mosk. Energeticheskii Inst., 1994, pp. 89-92.
9. Rebrov, M.Yu., Bublik, V.T., and Teplitskii, V.A., Lattice Parameters of CdS Crystals Grown under Different Vapor Pressures of Constituent Components, Dokl. Akad. Nauk SSSR, 1989, vol. 307, no. 3, pp. 597-600.
10. Morozova, N.K., Morozov, A.V., Karetnikov, I.A., et al., Optical Properties of CdS(O) Crystals Grown under Controlled Pressure of Sulfur and Cadmium Vapors, Zh. Prikl, Spektrosk., 1993, vol. 59, nos. 3-4, pp. 318-326.
11. Ygaki, K. and Sato, S., The Electrical Properties of ZnSe Heat-Treated in Controlled Partial Pressure of Constituent Elements, Jpn. J. Appl. Phys., 1979, vol. 18, no. 10, pp. 1965-1971.
12. Kalinkin, I.P., Murav'eva, K.K., Yurgel', I.B., et al., Preparation of Single-Crystal CdS and CdSe Films under Nearly Equilibrium Conditions, Izv. Akad. Nauk SSSR, Neorg. Mater., 1970, vol. 6, no. 9, pp. 1564-1567.
13. Chernow, F., Courtens, E., Douma, M., et al., High-Resistivity p-Type CdS, Appl. Phys. Lett., 1966, vol. 9, no. 4, pp. 145-146.
14. Akimoto, K., Miyajima, T., and Mory, G., Photoluminescence Spectra of Oxygen-Doped ZnSe Grown by Molecular-Beam Epitaxy, Phys. Rev. B: Condens. Matter, 1989, vol. 39, no. 5, pp. 3138-3142.
15. Zuev,A.P., Kulakov, M.P., Fadeev, A.V., and Kireiko, V.V., Oxygen Concentration in Melt-Grown Crystals of ZnS, ZnSe, and CdS, Izv. Akad. Nauk SSSR, Neorg. Mater., 1981, vol. 17, no. 7, pp. 1159-1161.