Tight-binding studies of crystal stability and defects in Bi2Te3

Journal of Physics and Chemistry of Solids

Volumn 55, Issue 4, 1994, Pages 327-338

  Pecheur, P ^a   Toussaint, G ^a  

^a CNRS   (France)

Author keywords

Bi2Te3; defects; electronic structure

Indexed keywords

EID: 2742546317     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3697(94)90229-1     Document Type: Article

References (31)

1. I.E.E. Materials & Devices Series 7
2. Doping properties of Pb and Ge in Bi2Te2 and Sb2Te3
3. I.E.E. Materials & Devices Series 7
4. The Electronic Structure of Conjugated Systems. I. General Theory
5. Preparation and Electrical Properties of Bi2Te3-Ge Alloys
6. Deep and resonance states in AIVBVIsemiconductors