Historical perspective on the discovery of porous silicon

Physica Status Solidi C: Conferences

Volumn 2, Issue 9, 2005, Pages 3185-3187

  Uhlir Jr , Arthur ^a   Uhlir, Ingeborg ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTROCHEMISTRY;

BELL TELEPHONE LABORATORIES;

POROUS SILICON;

EID: 27344436933     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461100     Document Type: Conference Paper

References (12)

1. A. Uhlir, Jr., Electrolytic Shaping of Germanium and Silicon, Bell System Tech. J. 35, 333-347 (1956);
2. reprinted as Bell System Monograph 2611.
3. J. W. Tiley and R. A, Williams, Electrochemical Technique of Fabricating of Surface -Barrier Transistors, Proc. IRE, Vol. 41, Dec. 1973.
4. A. Uhlir, Jr., Micromachining with Virtual Electrodes, Rev. Sci. Instrum. 26, 965-968 (1955);
5. reprinted as Bell Telephone System Monograph 2515.
6. M. V. Sullivan, D. L. Klein, R. M. Fine, L. a. Popliano, and G. A. Klein, An Electropolishing Technique for Germanium and Silicon, J. Electrochem. Soc. 110, 412-419 (1963).
7. C.S. Fuller and J. A. Ditzenberger, Diffusion of Donor and Acceptor Elements in Silicon, J. Appl. Phys. 27, 544-553 (1955).
8. D.R. Turner, Electropolishing Silicon in Hydrofluoric Acid Solutions, J. Electrochem. Soc. 105, 402 (1958).
9. D. R. Turner, On the Mechanism of Chemically Etching Germanium and Silicon, J. Electrochem. Soc. 107, 810-816 (1960).
10. R. J. Archer, Stain Films on Silicon, Phys. Chem. Solids 14, 104-110 (1960).
11. Two-Terminal P-N Junction Devices for Frequency Conversion and Computation, Proc. IRE, Vol. 44, Sept. 1956 (received June 25, 1956, report at IRE-PGED, Washington, DC October, 1955).
12. The Potential of Semiconductor Diodes in High-Frequency Communication, Proceedings of the IRE, Vol. 46, pp. 1099-1105, June 1958.