n-Al0.75Ga0.25N epilayers for 250 nm emission ultraviolet light emitting diodes

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2083-2086

  Sun, W H ^a   Yang, J W ^a   Zhang, J P ^a   Gaevski, M E ^a   Chen, C Q ^a   Li, J W ^a   Gong, Z ^a   Su, M ^a   Khan, M Asif ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); GALLIUM NITRIDE; HALL EFFECT; HIGH TEMPERATURE APPLICATIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

ELECTRON CONCENTRATION; MIGRATION-ENHANCED METALORGANIC CHEMICAL VAPOR DEPOSITION (MEMOCVD); OPTICAL QUALITY; ULTRAVIOLET LIGHT EMITTING DIODES (UVLEDS);

ALUMINUM NITRIDE;

EID: 27344436082     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461561     Document Type: Conference Paper

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