Ab initio calculations of charged point defects in GaN

Physica Status Solidi C: Conferences

Volumn 2, Issue 1, 2005, Pages 507-510

  Gulans, A ^a   Evarestov, R A ^b   Tale, I ^a   Yang, C C ^c  

^a UNIVERSITY OF LATVIA   (Latvia)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GALLIUM NITRIDE; PROBABILITY DENSITY FUNCTION;

DOPANTS; GENERALIZED GRADIENT APPROXIMATION (GGA); ONE-ELECTRON STATES; SUPERCELL;

POINT DEFECTS;

EID: 27344435051     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460219     Document Type: Conference Paper

References (7)

1. M. Leslie and M. J. Gillan, J. Phys. C 18, 973 (1985).
2. G. Makov and M. C. Payne, Phys. Rev. B 51, 4014 (1995).
3. V. R. Saunders, R. Dovesi, C. Roetti, R. Orlando,C. M. Zicovich-Wilson, N. M. Harrison, K. Doll, B. Civalleri, I. J. Bush, Ph. D'Arco, and M. Llunell, CRYSTAL2003 User's Manual (2003).
4. J. P. Perdew and Y. Wang, Phys. Rev. B 45, 13244 (1992).
5. R. A. Evarestov, S. Piskunov, E. A. Kotomin, and G. Borstel, Phys. Rev. B 67, 064101(2003).
6. A. Gulans, R. A. Evarestov, I. Tale, and C. C. Yang, phys. stat. sol. (c) (submitted).
7. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976).