Ways of achieving high-performance MRAMs

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 82-83

  Motoyoshi, M ^a   Kano, H ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MRAM DEVELOPMENTS; SPIN TRANSFER SWITCHING (STS); TOGGLE-MODE MRAM;

CLADDING (COATING); EMBEDDED SYSTEMS; MAGNETORESISTANCE; SWITCHING;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 27144545362     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2005.1497089     Document Type: Conference Paper

References (11)

1. L.Savtchenko et al,. US Patent 6545906 B1
2. M.Durlam et al., IEDM Tech. Dig., pp. 827-830, 2003
3. W. H. Butler et al.,Phys. Rev. B63, 054416, 2001
4. J. Mathon et al., Phys. Rev. B63, 220403R, 2001
5. J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1, 1996
6. D. D. Tang et al., IEDM Tech. Dig., pp. 997-999, 1995
7. J. H. Park et. al., IEDM Tech. Dig., pp. 827-830, 2003
8. T. Yamamoto et al., MMM Tech. Dig., pp. 221-222, 2004
9. T. Kai et al., IEDM Tech. Dig., pp. 827-830, 2003
10. S. S. P. Parkin et al., Nature Mat.3 (12) pp. 862-867, 2004
11. Y. Huai et al., Appl. Phys. Lett. 84 (16), pp. 3118-3120, 2004