A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 128-129

  Zafar, S ^a   Yang, M ^a   Gusev, E ^a   Callegari, A ^a   Stathis, J ^a   Ning, T ^a   Jammy, R ^a   Ieong, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRIC FILMS; HYBRID ORIENTATION; SUBSTRATE ORIENTATION;

FIELD EFFECT TRANSISTORS; HYDROGEN; NITRIDES; PLASMAS; STRESS ANALYSIS;

VLSI CIRCUITS;

EID: 27144544480     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2005.1497108     Document Type: Conference Paper

References (6)

1. F.-L. Yang et al, IEDM (2003),
2. M. Yang et al; VLSI (2004);
3. S. Meada et al, IRPS (2004);
4. S. Zafar et al, VLSI (2004);
5. M. Yang et al, EDL 24, p 339 (2003);
6. M. Yang et al, IEDM, p 453 (2003)