Mechanism of Gm degradation and comparison of Vt instability and reliability of HfO 2 HfSiO x and HfAlO x Gate dielectrics with 80 nm poly-Si gate CMOS

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 132-133

  Tseng, H H ^a   Grant, J M ^a   Hobbs, C ^a   Tobin, P J ^a   Luo, Z ^b   Ma, T P ^b   Hebert, L ^a   Ramon, M ^a   Kalpat, S ^a   Wang, F ^a   Triyoso, D ^a   Gilmer, D C ^a   White, B E ^a   Abramowitz, P ^a   Moosa, M ^a  

^a Free Scale Semiconductor   (United States)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27144512090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2005.1497110     Document Type: Conference Paper

References (8)

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