Thermal hysteresis analysis of MEMS pressure sensors

Journal of Microelectromechanical Systems

Volumn 14, Issue 4, 2005, Pages 782-787

  Chiou, J Albert ^a   Chen, Steven ^a  

^a MOTOROLA INC   (United States)

Author keywords

Finite element analysis (FEA); Microelectromechanical systems (MEMS) pressure sensor; Piezoresistive transducer (PRT); Thermal hysteresis

Indexed keywords

FINITE ELEMENT METHOD; HYSTERESIS; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRIC TRANSDUCERS; PLASTIC DEFORMATION; PRESSURE MEASUREMENT; THERMAL CYCLING; VISCOPLASTICITY;

PIEZORESISTIVE TRANSDUCER; PRESSURE SENSOR; THERMAL HYSTERESIS;

MICROSENSORS;

EID: 27144502766     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2005.845460     Document Type: Article

References (4)

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2. C. S. Smith, "Piezoresistance effect in germanium and silicon," Phys. Rev., vol. 94, pp. 42-49, 1954.
3. W. D. Nix, "Mechanical properties of thin films," Metallurg. Trans. A, vol. 20A, pp. 2217-2245, 1989.
4. P. A. Flinn, D. S. Gardner, and W. D. Nix, "Measurement and interpretation of stress in aluminum-based metallization as a function of thermal history," IEEE Trans. Electron Devices, vol. 34, no. 3, pp. 689-699, Mar. 1987.