Low capacitance and high isolation bond pad for high-frequency RFICs

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 746-748

  Chong, Kyuchul ^a   Xie, Ya Hong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bond pad; Crosstalk; Parasitic capacitance; Porous Si (PS); Radio ferquency integrated circuit (RFIC)

Indexed keywords

ANODIC OXIDATION; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CROSSTALK; CURRENT DENSITY; POROUS SILICON; REACTIVE ION ETCHING;

BOND PAD; PARASITIC CAPACITANCE; RADIO FREQUENCY INTEGRATED-CIRCUIT (RFIC);

INTEGRATED CIRCUIT LAYOUT;

EID: 27144442793     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854399     Document Type: Article

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