Grain growth of β-silicon nitride in RE (RE = Y, Gd, Nd and La) -Mg-Si-O-N melts

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 69, Issue 8, 2005, Pages 719-722

  Nakata, Daiji ^a   Saito, Noritaka ^a   Umemoto, Ayumu ^b   Nakashima, Kunihiko ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b TOTO LTD   (Japan)

Author keywords

Anisotropic ostwald ripening; Morphology; Oxynitride melt; Rare earth; Silicon nitride

Indexed keywords

ANISOTROPIC OSTWALD RIPENING; IONIC RADIUS; OXYNITRIDE MELTS; RARE-EARTH;

ASPECT RATIO; CRYSTAL GROWTH FROM MELT; ELECTRON MICROSCOPY; MICROSTRUCTURE; MORPHOLOGY; RARE EARTH COMPOUNDS; SILICON NITRIDE;

GRAIN GROWTH;

EID: 26944476660     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet.69.719     Document Type: Article

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