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Volumn 63, Issue 5, 1996, Pages 336-341

Quenching of photoconductivity by a strong electric field in tin δ-doped GaAs structures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 26844559844     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567027     Document Type: Article
Times cited : (2)

References (12)
  • 6
    • 26844438826 scopus 로고
    • Solid State Phenomena, Sci-Tech, Brookfield, Vermont
    • J. C. Bourgoin [Ed.], Physics of DX Centers in GaAs Alloys, Solid State Phenomena, Sci-Tech, Brookfield, Vermont, 1990, Vol. 10.
    • (1990) Physics of DX Centers in GaAs Alloys , vol.10
    • Bourgoin, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.