Photoluminescence spectra of 4f-doped BaAl 2S 4 and other compound semiconductors

Journal of the Korean Physical Society

Volumn 47, Issue 3, 2005, Pages 512-515

  Choe, Sung Hyu ^a   Bang, Tae Hwan ^b  

^a Chosun University   (South Korea)

^b Sunghwa College   (South Korea)

Author keywords

BaAl 2S 4:Dy 3+; BaAl 2Se 4:Dy 3+; BaGa 2S 4:Dy 3+; BaGa 2Se 4:Dy 3; Crystal structure; Optical energy gap

Indexed keywords

EID: 26644450517     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. J. M. Goh, W. T. Kim, M. S. Jin, S. H. Choe, H. G. Kim and T. Y. Park, J. Appl. Phys. 88, 417 (2000).
2. P. C. Donahue and J. E. Halon, J. Electrochem. Soc. 121, 137 (1974).
3. M. Y. Kim, W. T. Kim, M. S. Jin, S. A. Park, N. H. Kim, H. G. Kim, S. C. Hyun and C. D. Kim, J. Korean Phys. Soc. 41, 774 (2002).
4. T. E. Peter and J. A. Baglio, J. Electrochem. Soc. 119, 230 (1972);
5. T. E. Peter, J. Electrochem. Soc. ibid. 119, 1720 (1972).
6. V. W. Klee and H. Schäfer, Z. Anorg. Allg. Chem. 479, 125 (1981).
7. K. T. Le Thi, A. Garicia, F. Guillen and C. Fouossier, Mater. Csi. Eng. B14, 393 (1992).
8. N. Miura, M. Kawamishi, H. Matsmoto and R. Nakano, Jpn. J. Appl. Phys. 38, 1291(1991)
9. M. S. Jin, C. I. Lee, C. S. Yoon, C. D. Kim, J. M. Goh and W. T. Kim, J. Mater. Res. 16, 1520 (2001).
10. S. A. Park, M. S. Jin, C. S. Yoon, C. I. Lee, M. Y. Kim, S. J. Baik and W. T. Kim, J. Korean Phys. Soc. 42, 838 (2003).
11. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971), Chap. 3.
12. G. H. Dieke, Spectra and Energy Levels of Rare Earth Ions in Crystals (Wiley, New-York, 1968), p. 268.
13. G. F. Koster, J. O. Dimmack, R. G. Wheder and H. Statg, Properties of 32 Point Groups (MIT, Cambridge, 1963), p. 80.