COSMOS - A novel MOS device paradigm

IEEE Transactions on Nanotechnology

Volumn 4, Issue 5, 2005, Pages 588-593

  Kaya, Savas ^a,b  

^a IEEE   (United States)

^b Ohio University   (United States)

Author keywords

CMOS field effect transistors (FETs); CMOS integrated circuits (ICs); Leakage currents; Silicon germanium alloys; Silicon on insulator (SOI) technology; Ultra large scale integration

Indexed keywords

CMOS FIELD-EFFECT TRANSISTORS (FET); CMOS INTEGRATED CIRCUITS (ICS); SILICON-GERMANIUM ALLOYS; ULTRA-LARGE-SCALE INTEGRATION;

COMPUTER AIDED DESIGN; COMPUTER ARCHITECTURE; COMPUTER SIMULATION; LEAKAGE CURRENTS; MOSFET DEVICES; OPTIMIZATION; PARAMETER ESTIMATION; SILICON ON INSULATOR TECHNOLOGY; SUSTAINABLE DEVELOPMENT;

CMOS INTEGRATED CIRCUITS;

EID: 26644449835     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851423     Document Type: Article

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