A high-efficiency/CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-μm CMOS technology

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 634-636

  Hsu, T H ^a   Fang, Y K ^a   Yaung, D N ^b   Wuu, S G ^b   Chien, H C ^b   Tseng, C H ^b   Yao, L L ^b   Wang, W D ^b   Wang, C S ^b   Chen, S F ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Air gap; Air gap in situ microlens (AGML); Crosstalk and sensitivity; Image sensor; Microlens

Indexed keywords

CROSSTALK; IMAGE SENSORS; MICROLENSES; PHOTOSENSITIVITY; SEMICONDUCTOR DEVICE MANUFACTURE;

AIR GAP; AIR GAP IN SITU MICROLENS (AGML); CMOS IMAGE SENSOR;

CMOS INTEGRATED CIRCUITS;

EID: 26444568178     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854373     Document Type: Article

References (4)

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