High energy proton damage effects in thin high resistivity FZ silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 552, Issue 1-2, 2005, Pages 124-130

  Fretwurst, E ^a   Andricek, L ^b   Honniger F ^a   Kramberger, G ^c   Lindstrom G ^a   Lutz, G ^b   Reiche, M ^d   Richter, R H ^b   Schramm, A ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b MPI HALBLEITERLABOR   (Germany)

^c UNIVERSITY OF LJUBLJANA   (Slovenia)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Proton radiation; Radiation damage; Silicon detectors; Wafer bonding

Indexed keywords

ANISOTROPY; ANNEALING; COLLIDING BEAM ACCELERATORS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ETCHING; EXTRAPOLATION; PROTONS; RADIATION DAMAGE; RADIATION DETECTORS; SILICON; SILICON WAFERS;

HIGH ENERGY PROTON DAMAGE; LUMINOSITY; PROTON RADIATION; SILICON DETECTORS; VERTEX DETECTORS; WAFER BONDING;

HIGH ENERGY PHYSICS;

EID: 26444494915     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.019     Document Type: Conference Paper

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