High resolution quantitative SIMS analysis of shallow boron implants in silicon using a bevel and image approach

Applied Surface Science

Volumn 252, Issue 4, 2005, Pages 893-904

  Fearn, S ^a   McPhail, D S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Chemical bevelling; Oxygen loading; Shallow boron implanted silicon; SIMS; SIMS ion imaging

Indexed keywords

BORON; CHEMICAL ANALYSIS; DATA ACQUISITION; DOPING (ADDITIVES); IMAGING TECHNIQUES; ION BEAMS; OPTICAL RESOLVING POWER; SURFACE PHENOMENA;

CHEMICAL BEVELLING; OXYGEN LOADING; SHALLOW BORON IMPLANTED SILICON; SIMS ION IMAGING;

SECONDARY ION MASS SPECTROMETRY;

EID: 26444438033     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.096     Document Type: Article

References (21)

1. J. Maul, and S. Patel A. Benninghoven B. Hagenhoff H.W. Werner Secondary Ion Mass Spectrometry X 1997 Wiley Chichester 707
2. D.P. Chu, M.G. Dowsett, T.J. Ormsby, and G.A. Cooke J. Vac. Sci. Technol. B 16 1998 302
3. D.P. Chu, and M.G. Dowsett Phys. Rev. 56 1997 15167
4. K. Wittmaack Surf. Interface Anal. 26 1998 290
5. M.G. Dowsett, N.S. Smith, R. Bridgeland, D. Richards, A.C. Lovejoy, and P. Pendrick A. Benninghoven B. Hagenhoff H.W. Werner Secondary Ion Mass Spectrometry X 1997 Wiley Chichester 367
6. J.B. Clegg, N.S. Smith, M.G. Dowsett, M.J.J. Theunissen, and W.B. de Boer J. Vac. Sci. Technol. A 14 1996 2645
7. M.G. Dowsett Appl. Surf. Sci. 203-204 2003 5 12
8. R.G. Wilson, F.A. Stevie, and C.W. Magee Practical information with regards to SIMS depth profiling can be found Secondary Ion Mass Spectrometry 1989 Wiley New York
9. P.C. Zalm, and C.J. Vreizema Nucl. Instrum. Meth. Phys. Res. B 64 1992 626
10. B. Mohadjeri, and B.G. Svensson J. Vac. Sci. Technol. B 12 1993 209
11. K. Wittmaack, and S.F. Corcoran J. Vac. Sci. Technol. B 16 1998 272
12. K. Wittmaack, S.B. Patel, S.F. Corcoran, Presented at 1998 International Conference on Characterisation and Metrology for ULSI Technology.
13. J. Bellingham, M.G. Dowsett, E. Collart, and D. Kirkwood Appl. Surf. Sci. 203/204 2003 851 854
14. W. Vandervorst, T. Janssens, B. Brijs, T. Conard, C. Huyghebaert, J. Fruhuauf, A. Bergmaier, G. Dollinger, T. Buyuklimanli, J.A. VandenBerg, and K. Kimura Appl. Surf. Sci. 231/232 2004 618 631
15. C.M. Hsu, High resolution SIMS analysis using a chemical bevelling technique, Ph.D. Thesis, University of London, 1995.
16. C.M. Hsu, and D.S. McPhail Surf. Int. Anal. 23 1995 665
17. D.R. Turner J. Electrochem. Soc. 107 1960 810
18. H. Robbins, and B.J. Schwarz J. Electrochem. Soc. 106 1959 506
19. V.A. Myamlin, and Y.V. Pleskov Electrochemistry of Semiconductors 1967 Plenum Press New York
20. C. Spinella, V. Raineri, M. Saggio, and S.U. Campisano Nucl. Instrum. Meth. Phys. Res. B 96 1995 139
21. J.F. Ziegler, and J.P. Biersack The Stopping and Range of Ions and Solids 1985 Pergamon Press New York