High-temperature aging behavior of Gd-doped ceria

Electrochemical and Solid-State Letters

Volumn 7, Issue 6, 2004, Pages

  Zhang, T S ^a   Ma, J ^a   Kong, L B ^a   Hing, P ^a   Chan, S H ^b   Kilner, J A ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANTS; GRAIN BOUNDARY CONDUCTIVITIES; ORDERED PHASES;

AGING OF MATERIALS; CERIUM COMPOUNDS; DISSOLUTION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GADOLINIUM; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; OXYGEN; POSITIVE IONS; SOLID SOLUTIONS; SOLUBILITY; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

ELECTROCHEMISTRY;

EID: 2642533676     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1697909     Document Type: Article

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