Preparation and structural properties of Culn (Se,S)2 thin films prepared by the thermal diffusion of sulphur into CuInSe2

International Journal of Ambient Energy

Volumn 25, Issue 2, 2004, Pages 79-84

  Dejene, F B ^a   Alberts, V ^b  

^a UNIVERSITY OF THE FREE STATE   (South Africa)

^b UNIVERSITY OF JOHANNESBURG   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP OF SEMICONDUCTORS; OPEN-CIRCUIT VOLTAGE; SOLID-STATE DIFFUSION; SULPHURISATION TEMPERATURE;

CONCENTRATION (PROCESS); COPPER COMPOUNDS; CRYSTALLIZATION; DEPOSITION; ELECTRON BEAMS; EVAPORATION; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; SULFUR; SURFACE ROUGHNESS; THERMAL DIFFUSION; THERMAL EFFECTS; X RAY DIFFRACTION;

THIN FILMS;

EID: 2642532021     PISSN: 01430750     EISSN: 21628246     Source Type: Journal    
DOI: 10.1080/01430750.2004.9674944     Document Type: Article

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