Interplay between charge localization and magnetic ordering in amorphous GdxSi1-x

Journal of Magnetism and Magnetic Materials

Volumn 272-276, Issue , 2004, Pages 1351-1352

  Chumakov, N K ^a   Gudenko, S V ^a   Tugushev, V V ^a   Davydov, A B ^a   Ozhogin, V I ^a   Helgren, E ^b   Hellman, F ^b  

^a KURCHATOV INSTITUTE   (Russian Federation)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Amorphous semiconductor; Charge localization; Disorder; Electron spin resonance; Magnetic ordering; Magnetic semiconductor

Indexed keywords

CARRIER CONCENTRATION; FERROMAGNETIC MATERIALS; MAGNETIZATION; MAGNETORESISTANCE; PARAMAGNETIC RESONANCE; SILICON;

AMORPHOUS SEMICONDUCTOR; CHARGE LOCALIZATION; DISORDER; MAGNETIC SEMICONDUCTOR;

GADOLINIUM COMPOUNDS;

EID: 2642510844     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2003.12.076     Document Type: Article

References (3)

1. Hellman F., et al. Phys. Rev. Lett. 77:1996;4652.
2. Hellman F., et al. Phys. Rev. Lett. 84:2000;5411.
3. Kakazei G.N., et al. J. Appl. Phys. 85:1999;5654.