In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

Applied Physics Letters

Volumn 63, Issue 6, 1993, Pages 821-823

  Toyoshima, H ^a   Niwa, T ^a   Yamazaki, J ^a   Okamoto, A ^a  

^a NEC CORPORATION   (Japan)

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EID: 26044441043     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.109919     Document Type: Article

References (14)