Interdiffusion in GaAs/GaAsP and GaAs/GaAsSb superlattices

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1101-1108

  Schultz, M ^a   Egger, U ^a   Scholz, R ^a   Breitenstein, O ^a   Werner, P ^a   Gosele U ^a   Franzheld, R ^b   Uematsu, M ^c   Ito, H ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

^c NTT CORPORATION   (Japan)

Author keywords

As sublattice; Diffusion; GaAs; Simulation; Superlattice

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SUPERLATTICES; VACANCIES;

DIFFUSION EXPERIMENTS; EFFECTIVE DIFFUSION COEFFICIENTS; GAAS; INTERDIFFUSION PROCESS; INTERSTITIAL COMPLEXES; INTERSTITIAL DIFFUSION; SIMULATION; SUB-LATTICES;

DIFFUSION;

EID: 25944472755     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1101     Document Type: Article

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