Microwave detectors based on low-barrier planar Schottky diodes and their characteristics

Radiophysics and Quantum Electronics

Volumn 48, Issue 6, 2005, Pages 485-490

  Shashkin, V I ^a   Vaks, V L ^a   Danil'tsev, V M ^a   Maslovsky, A V ^a   Murel, A V ^a   Nikiforov, S D ^a   Khrykin, O I ^a   Chechenin, Yu I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MILLIMETER WAVE DEVICES; RADIATION DETECTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

BOLTZMANN CONSTANT; BROADBAND DETECTORS; MICROWAVE DETECTORS; MILLIMETER WAVE BAND; PLANAR LOW-BARRIER DIODE; REDUCED EFFECTIVE BARRIER HEIGHT; RICHARDSON CONSTANT;

SCHOTTKY BARRIER DIODES;

EID: 25844485848     PISSN: 00338443     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11141-005-0092-8     Document Type: Article

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