Photoluminescence study on Eu-implanted GaN

Chinese Physics

Volumn 14, Issue 10, 2005, Pages 2141-2144

  Zhang, Chun Guang ^a   Bian, Liu Fang ^a   Chen, Wei De ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Gallium nitride; Implanting; Metalorganic chemical vapour deposition; Photoluminescence

Indexed keywords

ANNEALING; GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUENCHING; THIN FILMS;

IMPLANTING; PL INTENSITY; THERMAL QUENCHING;

PHOTOLUMINESCENCE;

EID: 25644437776     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/10/037     Document Type: Article

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