Adsorption structure of formic acid on Si (100) studied by surface NEXAFS

Surface Science

Volumn 433-435, Issue , 1999, Pages 549-553

  Ikeura Sekiguchi, Hiromi ^a   Sekiguchi, Tetsuhiro ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Chemisorption; Formic acid; Near edge X ray absorption fine structure (NEXAFS); Silicon; Surface

Indexed keywords

EID: 25544464410     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00039-4     Document Type: Article

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