Self-localization of holes in a lightly doped Mott insulator

European Physical Journal B

Volumn 47, Issue 1, 2005, Pages 37-46

  Kou, S P ^a   Weng, Z Y ^b  

^a BEIJING NORMAL UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIELECTRIC PROPERTIES; PERMITTIVITY;

ANTIFERROMAGNETIC SPIN; DOPED HOLES; SELF-LOCALIZATION;

ANTIFERROMAGNETIC MATERIALS;

EID: 25444505028     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2005-00300-7     Document Type: Article

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