A silicon-oxide-silicon nanogap device structure

Proceedings of the IEEE Conference on Nanotechnology

Volumn 2002-January, Issue , 2002, Pages 201-203

  Lundgren, P ^a   Bengtsson, S ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Chemical elements; Contacts; Displays; Doping; Electric variables; Etching; Leakage current; Nanoscale devices; Nanostructures; Silicon

Indexed keywords

CHEMICAL ELEMENTS; CONTACTS (FLUID MECHANICS); DISPLAY DEVICES; DOPING (ADDITIVES); ETCHING; LEAKAGE CURRENTS; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON; SURFACE TREATMENT;

ELECTRIC VARIABLES; ELECTRICAL CHARACTERISTIC; HIGH SENSITIVITY; LOW-PARASITIC; NANO-GAP; NANOGAPS; NANOSCALE DEVICE; SILICON STRUCTURES;

SILICON OXIDES;

EID: 25444493232     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2002.1032225     Document Type: Conference Paper

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