Effects of lanthanum doping on the dielectric, piezoelectric properties and defect mechanism of PZN-PZT ceramics prepared by hot pressing

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 9, 2005, Pages 1854-1861

  Zeng, X ^a,b   Ding, A L ^a   Deng, G C ^a,b   Liu, T ^a,b   Zheng, X S ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSE PHASE TRANSITION (DPT); ELECTRICAL PROPERTIES; MORPHOTROPIC PHASE BOUNDARY (MBP); OXYGEN CONDUCTION;

CERAMIC MATERIALS; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); FERROELECTRICITY; HEAT CONDUCTION; HOT PRESSING; PHASE TRANSITIONS; PIEZOELECTRICITY; SPECTROSCOPY;

LANTHANUM;

EID: 25444481332     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200420049     Document Type: Article

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