Optical and structural investigation of GaN xP 1- x/GaP structures for light emitting diodes

Vacuum

Volumn 80, Issue 1-3, 2005, Pages 229-235

  Peternai, L ^a   Kovac J ^a,b   Jakabovic J ^a   Vincze, A ^a,b   Satka A ^a,b   Gottschalch, V ^c  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INTERNATIONAL LASER CENTER   (Slovakia)

^c UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

GaNP; LED; Optical properties; SEM; Surface morphology

Indexed keywords

DISLOCATION PITS; GANP; STRUCTURAL PARAMETERS; VISIBLE SPECTRUM;

COMPOSITION; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 25444480223     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.08.004     Document Type: Conference Paper

References (8)

1. D. Thomas, J. Hopfield, and C. Frosch Phys Rev Lett 15 1965 857 860
2. Y. Zhang, B. Fluegel, A. Mascarenhas, H. Xin, and C. Tu Phys Rev B 62 2000 4493 4500
3. D. Thomas, and J. Hopfield Phys Rev 150 1966 680 689
4. S. Miyoshi, H. Yuguchi, K. Onabe, R. Ito, and Y. Shiraki J Cryst Growth 145 1994 87 92
5. L. Bellaiche, S. Wei, and A. Zunger Phys Rev B 56 1997 10233 10240
6. P. Kent, and A. Zunger Phys Rev B 64 2001 115208-1-24
7. I. Buyanova, W. Chen, and C. Tu Solid State Electron 47 2003 467 475
8. R. Biefeld J Cryst Growth 56 1982 382 388