Determination of the donor-acceptor pair separation in GaP semiconductor doped with sulfur and zinc using its photoluminescence spectrum

International Journal of Modern Physics B

Volumn 11, Issue 31, 1997, Pages 3723-3731

  Baskoutas, S ^a   Athanasiou, N S ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2542519423     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979297001908     Document Type: Article

References (10)

1. P. J. Wiesner, R. A. Street and H. D. Wolf, Phys. Rev. Lett. 35, 1366 (1975).
2. E. Kartheuser, A. Babcenco and R. Evrard, Phys. Status Solidi B109, 375 (1982).
3. M. Soltani, M. Certier, R. Evrard and E. Kartheuser, J. Appl. Phys. 78, 5626 (1995).
4. S. M. Sze, Physics of Semiconductor Devices (Wiley Eastern, New Delhi, 1993).
5. P. J. Dean, in Progress in Solid State Chemistry, Vol. 8 eds. J. O. Mc Caldin and G. Somorjai (Pergamon, Oxford, 1973), p. 1.
6. S. Baskoutas, A. Jannussis and P. Yianoulis, Phys. Rev. B54, 8526 (1996-II).
7. S. Baskoutas and N. S. Athanasiou, Mod. Phys. Lett. B11, 503 (1997).
8. E. Kartheuser, R. Evrard and F. Williams, Phys. Rev. B21, 648 (1990).
9. S. Baskoutas, A. Jannussis and R. Mignani, J. Phys. A26, 7137 (1993).
10. S. Munnix and E. Kartheuser, Phys. Rev. B26, 6776 (1982).