Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 514-518

  Zhang, W ^a   Lloyd, N S ^a   Osman, K ^a   Bonar, J M ^a   Hamel, J S ^b   Bagnall, D M ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Low pressure chemical vapor deposition; Selective epitaxial growth; Selectivity; Surface morphology

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; HYDROGEN; MIXTURES; MORPHOLOGY; SILANES; SILICON;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE EPITAXIAL GROWTH; SELECTIVITY;

MICROELECTRONICS;

EID: 2542496380     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00203-5     Document Type: Conference Paper

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