Effect of pressure on electrical properties of SnSxSe 1-x single crystals

High Pressure Research

Volumn 23, Issue 4, 2003, Pages 417-423

  Patel, T H ^a   Vaidya, Rajiv ^a   Patel, S G ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

A.c. resistance; Optical absorption; Pressure; Semiconductor; Thermoelectric power

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; HOLOGRAPHY; LIGHT ABSORPTION; OPTOELECTRONIC DEVICES; PHOSPHORUS; SEMICONDUCTOR MATERIALS; SODIUM CHLORIDE; THERMOELECTRICITY; TIN COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

A.C. RESISTANCE; BAND GAP; ROOM TEMPERATURE (RT); THERMOELECTRIC POWER (TEP);

SINGLE CRYSTALS;

EID: 2542474193     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/0895795031000114368     Document Type: Article

References (37)

1. Logothetidis, S. and Polatoglou, H. M. (1987). Phys. Rev., B36, 7491.
2. Valiukonis, G., Gussienova, D. A., Krivaite, G. and Sileika, A. (1986). Phys. Stat. Solidi (b), 135, 299.
3. Bletskan, D. I., Kopinets, I. F., Pogoretskii, P. P., Salkova, E. N. and Chepce, D. V. (1975). Kristallographica, 20, 1008.
4. Parentau, M. and Carlone, M. (1990). Phys. Rev., B41, 5227.
5. Bletskan, D. I., Taran, V. I. and Sichka, M. Yu. (1976). Ukr. Fiz. Zh., 21, 1436.
6. Singh, J. P. and Bedi, R. K. (1990). J. Appl. Phys., 68, 2776.
7. Bedi, R. K., Gopalan, B. S. V. and Majhi, J. (1992). Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits. SPIE Publications, p. 104.
8. Lofersky, J. J. (1956). J. Appl. Phys., 27, 777.
9. Lofersky, J. J. (1963). Proc. I.E.E.E., 51, 667.
10. Rodoat, M. (1975). Acta Electronics, 18, 345.
11. Rodoat, M. (1977). Rev. Phys. Appl., 12, 411.
12. Okazaki and Ueda, I. (1956). J. Phys. Soc. Japan, 11, 470.
13. Okazaki (1958). J. Phys. Soc. Japan, 13, 1151.
14. Albers, W., Hass, C., Vink, H. J. and Wasscher, J. D. (1961). J. Appl. Phys., 32(10), 2220.
15. Albers, W., Hass, C., Ober, H., Shrodder, G. R. and Wasscher, J. D. (1962). J. Phys. Chem. Solids, 23, 215.
16. Agnihotri, O. P., Jain, A. K. and Gupta, B. K. (1979). J. Cryst. Growth, 46, 491.
17. Garg, A. K., Jain, A. K. and Agnihotri, O. P. (1983). Ind. J. Pure and Appl. Phys., 21, 276.
18. Elkorashy, A. M. (1986). J. Phys. Chem. Solids, 47, 497.
19. Julien, C., Eddrief, M., Samara, I. and Balkanski, M. (1992). Mat. Sci. and Engg., B15, 70.
20. Elkorashy, A. M. (1989). Semicond. Sci. Tecnol., 4, 382.
21. Bhatt, V. P., Gireesan, K. and Pandya, G. R. (1989). J. Cryst. Growth, 96, 649.
22. Vyas, S. M., Pandya, G. R. and Desai, C. F. (1995). Ind. J. Pure and Appl. Phys., 33, 191.
23. Maier, H. and Daniel, D. R. (1977). J. Electron. Mat., 6, 693.
24. Yu, Y. G., Yue, A. S. and Stafsudd, O. M. (1981). J. Cryst. Growth, 142, 344.
25. Agarwal, A., Patel, P. D. and Laxminarayan, D. (1994). J. Cryst. Growth, 142, 344.
26. Agarwal, A. (1998). J. Cryst. Growth, 183, 347.
27. Martinez, H., Auriel, C., Loudet, M. and Pfister-Guillouzo, O. (1996). Appl. Surf. Sci., 103, 149.
28. Ariponnammal, S., Jayael, B. and Natarajan, S. (1996). Solid Stat. Commun., 100(5), 341.
29. Kennedy, G. C. and Lamori, P. N. (1962). J. Geophys. Res., 67, 851.
30. Ramashera Sheela, K. and Singh Anil, K. (1992). Physica C, 192, 328.
31. Ramashera Sheela, K. and Singh Anil, K. (1990). Bull. Mater. Sci., 14, 767.
32. Grandke, T. and Ley, L. (1977). Phys. Rev. B, 16, 832.
33. Park, A. W. and Srivastava, G. P. (1980). Phys. Status Solidi B, 101, K31.
34. Car, R., Ciucci, G. and Quartapelle, L. (1978). Phys. Status Solidi B, 86, 471.
35. Ciucci, G., Guarnieri, A., Masserini, G. L. and Quartapelle, L. (1979). Solid Stat. Commun., 29, 75.
36. Agarwal, M. K., Vaidya, S. N., Patel, P. D., Solanki, G. K. and Chaki, S. (1997). Advances in High Pressure Research in Condensed Matter, p. 424.
37. Chattopadhyay, T., Werner, A. and Von Schenering, H. G. (1983). Pressure induces phase transition in IV-VI compounds. In: Homan, C., MacCrone, R. K. and Whalley, E. (Eds.), Material Research Society Proceedings, Vol. 22. North Holland, New York, p. 93.