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Volumn 14, Issue 5, 2004, Pages 722-726

High resolution x-ray mask fabrication by a 100 keV electron-beam lithography system

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRON BEAM LITHOGRAPHY; ELECTROPLATING; MASKS; MICROSTRUCTURE; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; X RAY LITHOGRAPHY;

EID: 2542468602     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/5/010     Document Type: Article
Times cited : (10)

References (8)
  • 1
    • 0141612824 scopus 로고    scopus 로고
    • High resolution x-ray masks for the application of high aspect ratio microelectromechanical systems (HARMS)
    • Wang L et al 2002 High resolution x-ray masks for the application of high aspect ratio microelectromechanical systems (HARMS) Proc. SPIE 5037 1084-91
    • (2002) Proc. SPIE , vol.5037 , pp. 1084-1091
    • Wang, L.1
  • 2
    • 2542439273 scopus 로고    scopus 로고
    • http://www.fzk.de/link to IMT
  • 3
    • 19244372679 scopus 로고    scopus 로고
    • Automatic determination of spatial dose distribution for improved accuracy in e-beam proximity effect correction
    • Lee S Y and Laddha J 2001 Automatic determination of spatial dose distribution for improved accuracy in e-beam proximity effect correction Microelectron. Eng. 57-8 303-9
    • (2001) Microelectron. Eng. , vol.57 , Issue.8 , pp. 303-309
    • Lee, S.Y.1    Laddha, J.2
  • 4
    • 0035450885 scopus 로고    scopus 로고
    • A hierarchical pattern representation format for proximity effect correction in E-beam lithography
    • Lee S Y and Laddha J 2001 A hierarchical pattern representation format for proximity effect correction in E-beam lithography Microelectron. Eng. 57-8 311-9
    • (2001) Microelectron. Eng. , vol.57 , Issue.8 , pp. 311-319
    • Lee, S.Y.1    Laddha, J.2
  • 5
    • 2542443062 scopus 로고    scopus 로고
    • http://www.dimes.tudelft.nl
  • 6
    • 2542424240 scopus 로고    scopus 로고
    • www.ammt.de
  • 8
    • 0020764330 scopus 로고
    • Proximity effect correction for electron beam lithography by equalization of background dose
    • Owen G and Rissman P 1983 Proximity effect correction for electron beam lithography by equalization of background dose J. Appl. Phys. 54 3573-81
    • (1983) J. Appl. Phys. , vol.54 , pp. 3573-3581
    • Owen, G.1    Rissman, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.