Hall effect and band structure of p-CdSb in strong magnetic field

Semiconductor Science and Technology

Volumn 19, Issue 5, 2004, Pages 602-609

  Laiho, R ^a   Lashkul, A V ^b   Lisunov, K G ^a,b,c   Lahderanta E ^a,b   Safonchik, M O ^a,d   Shakhov, M A ^a,b,d  

^a UNIVERSITY OF TURKU   (Finland)

^b UNIVERSITY OF VAASA   (Finland)

^c INSTITUTE OF APPLIED PHYSICS   (Moldova)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CRYSTAL STRUCTURE; DATA REDUCTION; HALL EFFECT; MAGNETIC FIELDS; METAL INSULATOR TRANSITION; SENSORS;

CADMIUM ANTIMONIDE (CDSB); HALL MOBILITY; HEAVY-BAND BAND; LIGHT-HOLE BAND; THERMOELECTRIC SENSORS;

CADMIUM COMPOUNDS;

EID: 2542458532     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/5/008     Document Type: Article

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