A 5 to 6.5 GHz LTCC power amplifier module

Advancing Microelectronics

Volumn 31, Issue 2, 2004, Pages 7-9

  Ilkov, N ^a,c   Bakalski, W ^d   Matz, R ^a   Simburgert W ^b   Dernovsek, O ^a   Weger, P ^c  

^a SIEMENS AG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Advanced Packaging; Integrated Passive Components; LTCC Balun; LTCC Capacitor; Power Amplifier; Wireless LAN

Indexed keywords

CAPACITORS; CERAMIC MATERIALS; CMOS INTEGRATED CIRCUITS; ELECTRIC LINES; ELECTRONICS PACKAGING; IMPEDANCE MATCHING (ELECTRIC);

BICMOS TECHNOLOGY; LOW-TEMPERATURE CONFIRED CERAMICS (LTCC); THERMAL MANAGEMENT;

POWER AMPLIFIERS;

EID: 25144498047     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Yoshida, Isao, Katsueda, M., Morikawa, M., Matsunaga, Y., Fujioka, T., Hotta, M., Nunogawa, J., Kobayashi, K., Shimuzu, S., and Nagata, M.,"A 3. 6V 4W 0.2cc Si Power-MOSAmplifier Module for GSM Handset Phones," in ISSCC98 Digest of Technical Papers. 1998 IEEE International Solid-State Circuits Conference, February 1998, pp. 50-51.
2. Heo, D. et al.,"A 1.9 GHz DECT CMOS Power Amplifier with Fully Integrated Multilayer LTCC Passives," IEEE Microwave and Wireless Components Letters, vol. 11, pp. 249-251, June 2001.
3. W. Bakalski et al.,"A 5-6.5 GHz Power Amplifier Module with 0.3W at 2.4V in Si-bipolar," Electronic Letters, pp. 375-376, February 2003.
4. Y.Yoon et al.,"Spiral Transmission-Line Baluns for RF Microstrip Module Packages," IEEE tans. on Advanced Packaging, vol. 22, no. 3, pp. 332-336, 1999.
5. N. Marchand,"Transmission-Line Conversion Transformers," Electronics, vol. 17, pp. 142-145, Dec. 1944.
6. Jeff Merill,"Design of Baluns using Backward Wave Couplers," Applied Microwave and Wireless, vol. 10, pp. 66-78, October 2001.
7. R. Monghia, I. Bahl, and B. Bhartia, RF and Microwave Coupled-Line Circuits,Artech House, first edition, 1999.