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PROLITH: A comprehensive optical lithography model
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Mack, C.A.1
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Optimum stepper performance through image manipulation
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P. Trefonas and C. A. Mack, "Exposure Dose Optimization for a Positive Resist Containing Poly-functional Photoactive Compound," Advances in Resist Technology and Processing VIII, Proc., SPIE Vol. 1466 (1991).
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J. S. Petersen, C. A. Mack, J. Sturtevant, J. D. Byers and D. A. Miller, "Non-constant Diffusion Coefficients: Short Description of Modeling and Comparison to Experimental Results," Advances in Resist Technology and Processing XII, Proc., SPIE Vol. 2438 (1995).
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Mask bias in submicron optical lithography
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A method for correction of proximity effect in optical projection lithography
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30
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85045208136
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Improved reflectivity control of APEX-E positive tone deep-UV photoresist
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35
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Lithographic effects of metal reflectivity variations
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IC wafer reflectivity measurement in the UV and DUV and its application for ARC characterization
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Reduction of linewidth variation over reflective topography
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Process window analysis of the ARC and TAR systems for quarter micron optical lithography
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An investigation of the properties of thick photoresist films
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Acid size effect of chemically amplified negative resist on lithographic performance
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Relationship between physical properties and lithographic behavior in a high resolution positive tone deep-UV resist
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Reliability of photospeed and related measures of resist performances
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45
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0000471081
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Optimizing numerical aperture and partial coherence to reduce proximity effect in deep-UV lithography
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R.A. Cirelli, E.L. Raab, R.L. Kostelak, and S. Vaidya, "Optimizing Numerical Aperture and Partial Coherence to Reduce Proximity Effect in Deep-UV Lithography," SPIE Vol. 2197 (1994) pp. 429-439.
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Lithographic performance at Sub-300 nm design rules using high NA I-line stepper with optimized NA and a in conjunction with advanced PSM technology
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0010544674
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Practical 0.35 μm I-line lithography
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P. Luehrmann, and S. Wittekoek, "Practical 0.35 μm I-line Lithography," SPIE Vol. 2197 (1994) pp. 412-420.
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Isolated-grouped linewidth bias on SVGL micrascan
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Correcting for proximity effect widens process latitude
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Online photolithography modeling using spectrophotometry and PROLITH/2
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Evaluation of a photoresist process for 0.75 micron, G-line lithography
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Characterization of profile dependency on nitride substrate thickness for a chemically amplified I-line negative resist
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E. A. Puttlitz, J. P. Collins, T. M. Glynn, L. L. Linehan, "Characterization of Profile Dependency on Nitride Substrate Thickness for a Chemically Amplified I-line Negative Resist," SPIE Vol. 2438 (1995) pp. 571-582.
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Puttlitz, E.A.1
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Glynn, T.M.3
Linehan, L.L.4
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53
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8744282020
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Cost analysis of lithographic characterization: An overview
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SPIE
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P. M. Mahoney and C. A. Mack, "Cost Analysis of Lithographic Characterization: An Overview," Optical/Laser Microlithography VI, Proc., SPIE Vol. 1927 (1993) pp. 827-832.
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(1993)
Optical/Laser Microlithography VI, Proc.
, vol.1927
, pp. 827-832
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Mahoney, P.M.1
Mack, C.A.2
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