Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 85-89

  Kathawala, Gulzar A ^a   Mohamed, Mohamed ^a   Ravaioli, Umberto ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

double gate MOSFET; FinFET; Monte Carlo; quantum effects; velocity overshoot

Indexed keywords

CARRIER CONCENTRATION; FINFET; FINS (HEAT EXCHANGE); INTELLIGENT SYSTEMS; QUANTUM THEORY;

DOUBLE GATE MOSFET; DOUBLE-GATE MOSFETS; FULL-BAND MONTE CARLO; QUANTIZATION EFFECTS; QUANTUM EFFECTS; SHEET CHARGE DENSITY; SIZE-QUANTIZATION EFFECTS; VELOCITY OVERSHOOT;

MONTE CARLO METHODS;

EID: 25144488998     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011404.60973.8a     Document Type: Article

References (11)

1. Semiconductor Industry Association. (2001). International Technology Roadmap for Semiconductors. Online at: http:// public.itrs.net/Files/2001ITRS/Home.htm.
2. Y. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T. King, J. Bokor, and C. Hu, IEDM Tech. Dig., 421 (2001).
3. G. Pei, J. Kedzierski, P. Oldiges, M. Ieong, and E.C. Kan, IEEE Trans. Electron Devices, 49, 1411 (2002).
4. H. Tsuchiya and T. Miyoshi, IEICE Trans. Electron, E82-C, 880 (1999).
5. D. K. Ferry, Superlattice Microstructures, 27, 61 (2000).
6. M.V. Fischettiand S.F. Laux, Physical Review B, 48, 2344 (1993).
7. S. Yamakawa, H. Ueno, K. Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, and U. Ravaioli, J.Appl. Physics, 79, 911 (1996).
8. A.S. Spinelli, A. Benvenuti, and A. Pacelli, IEEE Trans. Electron Devices, 45, 1342.
9. S.A. Hareland, S. Krishnamurthy, S. Jallepalli, C.-F. Yeap, K. Hasnat, A.F Tasch,and C.M. Maziar, IEEE Trans. Electron Devices, 43, 90 (1996).
10. B. Winstead and U. Ravaioli, IEEE Trans. Electron Devices, 50, 440 (2003).
11. A. Duncan, U. Ravaioli, and J. Jakumeit, IEEE Trans. Electron Devices, 45, 867 (1998).