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Volumn 483-485, Issue , 2005, Pages 497-500

M-center in low-dose proton implanted 4H-SiC; Bistability and change in emission rate

Author keywords

4H SiC; Bistable; DLTS; Emission rate; Ion implantation; Metastable

Indexed keywords

ANNEALING; ION IMPLANTATION; PROTONS; THERMAL EFFECTS;

EID: 25144484102     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (13)
  • 3
    • 0000892819 scopus 로고    scopus 로고
    • C. G. Hemmingsson, N. T. Son, A. Ellison, J. Zhang, and E. Janzén, Phys. Rev. B. 58, R10 119 (1998).
    • C. G. Hemmingsson, N. T. Son, A. Ellison, J. Zhang, and E. Janzén, Phys. Rev. B. 58, R10 119 (1998).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.