|
Volumn 483-485, Issue , 2005, Pages 497-500
|
M-center in low-dose proton implanted 4H-SiC; Bistability and change in emission rate
|
Author keywords
4H SiC; Bistable; DLTS; Emission rate; Ion implantation; Metastable
|
Indexed keywords
ANNEALING;
ION IMPLANTATION;
PROTONS;
THERMAL EFFECTS;
BISTABLE;
EMISSION RATE;
METASTABLE;
DOSIMETRY;
|
EID: 25144484102
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (9)
|
References (13)
|