Progressive ArF exposure tool for the 65nm node lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 2, 2005, Pages 725-733

  Irie, Nobuyuki ^a   Hamatani, Masato ^a   Nei, Masahiro ^a  

^a NIKON CORPORATION   (Japan)

Author keywords

65nm node; ArF exposure tool; Dry; High NA; Immersion

Indexed keywords

ARGON; COMPUTER SOFTWARE; FLUORINE; IMAGING SYSTEMS; LENSES; LIGHTING; OPTIMIZATION; PROJECTION SYSTEMS;

65NM MODE; ARF EXPOSURE TOOL; DRY; HEAT MANAGEMENT; IMMERSION;

PHOTOLITHOGRAPHY;

EID: 25144476172     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599564     Document Type: Conference Paper

References (2)

1. H. Nishinaga, N. Tokuda, S. Owa, S. Hirukawa, O. Tanitsu, T. Kudo, H. Tanaka, "Development of polarized-light illuminator and its impact", SPIE5754-64, 27 February - 4 March 2005.
2. T. Hagiwara, N. Kondo, H. Irihama, K. Suzuki, N. Magome, "Development of aerial image based aberration measurement technique", SPIE5754-181, 27 February - 4 March 2005.