Tunable Transmission phase mask options for 65/45 nm node gate and contact processing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 3, 2005, Pages 1469-1477

  Kasprowicz, Bryan S ^a   Conley, Will ^c   Ham, Young Mog ^a   Cangemi, Michael J ^a   Morgana, Nicolo ^b   Cangemi, Marc J ^a   Cottle, Rand ^a   Progler, Christopher J ^a   Wu, Wei ^c   Litt, Lloyd C ^c   Cobb, Jonathan ^c   Roman, Bernie ^c  

^a PHOTRONICS INC   (United States)

^b Photronics Inc   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

EAPSM; Mask; Materials; Model; Simulation; Transmission

Indexed keywords

ATTENUATION; EMBEDDED SYSTEMS; GATES (TRANSISTOR); LITHOGRAPHY; MATERIALS; MODELS; MOLYBDENUM COMPOUNDS; PHASE SHIFT; SIMULATION; SPUTTERING;

EMBEDDED ATTENTUATING PHASE SHIFT MASK (EAPSM); MASK; PHASE SHIFT MASK; TRANSMISSION EMBEDDED ATTENTUATION;

MASKS;

EID: 25144450753     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.601011     Document Type: Conference Paper

References (5)

1. Ku, y., Anderson, E., Shattenburg, and Snith, H., Journal of Vacuum Science Technology B 6(1), 150 (1988).
2. Taylor, D., et. al., "193nm EAPSM inspection comparison: Commercial versus Alternate absorber material," SPIE BACUS Photomask Technoloy 23, Vol. 5256, (2003).
3. Van den Broeke, et. al.,
4. Conley, W, et. al., "High transmission mask technology for 45nm node imaging," SPIE Optical Microlithography XVIII, to be published (2005).
5. Kasprowicz, B.S., et. al., "CPL technology for sub-100nm contact hole imaging," SPIE Photomask Japan XI, Vol. 5446, (2004).