Copper-silicon carbide for IGBT thermal management

Advancing Microelectronics

Volumn 31, Issue 6, 2004, Pages 8-11

  Sundberg, Glenn ^a   Paul, Pradeep ^a   Sung, Changmo ^a   Vasilos, T ^a  

^a University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER COATINGS; CHEMICAL COMPATIBILITY; POWER DENSITY;

COPPER COMPOUNDS; ELECTRON DIFFRACTION; HEAT TRANSFER; INDUCTIVELY COUPLED PLASMA; INSULATED GATE BIPOLAR TRANSISTORS; MASS SPECTROMETRY; METALLIC MATRIX COMPOSITES; SILICON CARBIDE; THERMAL CONDUCTIVITY; THERMAL EXPANSION; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

PLATES (STRUCTURAL COMPONENTS);

EID: 25144447767     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. M.A.Occhionero, K.P. Fennessy, R.W.Adams, G.J. Sundberg, "AlSiC Baseplates for Power IGBT Modules: Design, Performance and Reliability, "Proceedings of PCIM 2001 Power Electronics Conference, Rosemont, pp. 172-177, September 2001
2. N.J. Gernert, K.L.Wert, E.M. Cruse, "Multi-Kilowatt Heat Pipe Heat Sink Performance,"Thermacore International, http://www.thermacore.com/pdfs/ kilowatt.pdf, pp. 1-7
3. C. Rado, B. Drevet, N. Eustathopoulos,"The Role of Compound Formation in Reactive Wetting: The Cu/SiC System," Acta Materialia, 2000, 48, 4483-4491
4. E.Kolawa,J.S. Chen,J.S. Reid, P.J. Pokela, M.A. Nicolet, "Tantalum Based Diffusion Barriers in Si/Cu VLSI Metallizations,"J.Appl. Phys. 70 (3), 1369-1373 August 1991
5. C. Rado, S. Kalogeropoulou, N. Eustathopoulos, "Wetting and Adhesion in Metal-Silicon Carbide Systems:The Effect of Surface Polarity of SiC," Scripta. Mater. 42 (2000) pp. 203-208
6. D.Tyler, William T. Black, "Introduction to Copper and Copper Alloys," www.asminternational.org/hbo/do/highlight/content/V02/D01/A09