Optical properties of ternary chalcogenide thin films with SnTe

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 4, 2005, Pages 1965-1969

  Petkov, P ^a   Vassilev, V ^a   Petkova, T ^b   Monchev, B ^a   Aljihmani, L ^a  

^a UNIVERSITY OF CHEMICAL TECHNOLOGY AND METALLURGY   (Bulgaria)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

Amorphous materials; As2Se3 GeSe2 SnTe; Band gap structure; Chalcogenide glasses; Optical properties; Thin film

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC COMPOUNDS; CHALCOGENIDES; ENERGY GAP; GERMANIUM COMPOUNDS; IV-VI SEMICONDUCTORS; LIGHT ABSORPTION; OPTICAL BAND GAPS; OPTICAL PROPERTIES; SELENIUM COMPOUNDS; TELLURIUM COMPOUNDS; THIN FILMS; TIN COMPOUNDS;

AMORPHOUS THIN FILMS; AS2SE3-GESE2-SNTE; BAND GAP STRUCTURE; CHALCOGENIDE GLASS; EVAPORATION AND CONDENSATION; TERNARY CHALCOGENIDES; THIN-FILM STRUCTURE; THREE-COMPONENT SYSTEM;

OPTICAL FILMS;

EID: 24644499965     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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