Low energy RBS and SIMS analysis of the SiGe quantum well

Applied Surface Science

Volumn 252, Issue 1 SPEC. ISS., 2005, Pages 123-126

  Krecar, D ^a   Rosner, M ^a   Draxler, M ^b   Bauer, P ^b   Hutter, H ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Ge layer; Low energy Rutherford backscattering; Quantum well; RBS; Secondary ion mass spectrometry; SIMS

Indexed keywords

GERMANIUM; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

GERMANIUM CONCENTRATION; LOW ENERGY RUTHERFORD BACKSCATTERING; RESPONSE FUNCTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 24644491298     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.109     Document Type: Conference Paper

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