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Volumn 47, Issue 2, 2005, Pages 306-312

A study on the validity of the skew scattering model for the anomalous hall effect in low-temperature molecular-beam epitaxy gallium manganese arsenide

Author keywords

Anomalous Hall Effect; Magnetic semiconductor; Spintronics

Indexed keywords


EID: 24644466896     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (11)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.