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Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 4, 2005, Pages 1863-1867

Temperature-dependent photoluminescence in Er-doped Ge-S-Ga glasses

(5) Ivanova, Z G a Tonchev, D b Ganesan, R c Gopal, E S R c Kasap, S O b

a BULGARIAN ACADEMY OF SCIENCES (Bulgaria)

b UNIVERSITY OF SASKATCHEWAN (Canada)

c INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

Er3+ emission; Ge S Ga glass; Low temperature photoluminescence; Raman scattering

Indexed keywords

ERBIUM COMPOUNDS; GALLIUM COMPOUNDS; GLASS; PHOTOLUMINESCENCE; RAMAN SCATTERING; TEMPERATURE;

EMISSION CROSS SECTION; ERBIUM CONCENTRATIONS; EXCITATION WAVELENGTH; HOST MATERIALS; LOW TEMPERATURE PHOTOLUMINESCENCE; STARK SPLITTING; STRUCTURAL UNIT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

GERMANIUM COMPOUNDS;

EID: 24644461034 PISSN: 14544164 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.