Range evaluation in SIMS depth profiles of Er-implantations in silicon

Applied Surface Science

Volumn 252, Issue 1 SPEC. ISS., 2005, Pages 271-277

  Mayerhofer, K ^a   Foisner, H ^a   Piplits, K ^a   Hobler, G ^a   Palmetshofer, L ^b   Hutter, H ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Implantation; Profile depth; Secondary ion mass spectrometry; SIMS; Sputter rate

Indexed keywords

COMPUTER SIMULATION; EXTRAPOLATION; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON WAFERS;

IMPLANTATION; PROFILE DEPTH; SPUTTER RATES; TRANSITION ELEMENTS;

ERBIUM;

EID: 24644455258     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.02.019     Document Type: Conference Paper

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