Synchrotron X-ray topographic study of dislocations and stacking faults in InAs

Journal of Crystal Growth

Volumn 283, Issue 3-4, 2005, Pages 320-327

  Lankinen, A ^a   Tuomi, T ^a   Riikonen, J ^a   Knuuttila, L ^a   Lipsanen, H ^a   Sopanen, M ^a   Danilewsky, A ^b   McNally, P J ^c   O'Reilly, L ^c   Zhilyaev, Y ^d   Fedorov, L ^d   Sipila H ^e   Vaijarvi S ^e   Simon, R ^f   Lumb, D ^g   Owens, A ^g  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF FREIBURG   (Germany)

^c DUBLIN CITY UNIVERSITY   (Ireland)

^d IOFFE INSTITUTE   (Russian Federation)

^e Oxford Instruments Analytical Oy   (Finland)

^f KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^g EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

A1. Crystal defects; A1. X ray topography; A3. Chloride vapor phase epitaxy; B2. Semiconducting indium compounds; B3. X ray detectors

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GRAPH THEORY; RADIATION; STACKING FAULTS; SYNCHROTRONS; THIN FILMS; VAPOR PHASE EPITAXY; VECTORS; X RAY DIFFRACTION;

BURGERS VECTORS; CHLORIDE VAPOR-PHASE EPITAXY; X-RAY DETECTORS; X-RAY TOPOGRAPHY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 24644451186     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.009     Document Type: Article

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