Determination of silicon oxide layer thickness by time-of-flight secondary ion mass spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2191-2192

  Benninghoven, A ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24644449803     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. J. Schwieters, H.-G. Cramer, T. Heller, U. Jürgens, E. Niehuis, J. Zehnpfenning, and A. Benninghoven, J. Vac. Sci. Technol. A 9, 2864 (1991).
2. K. Iltgen, C. Bendel, E. Niehuis, and A. Benninghoven, J. Vac. Sci. Technol. A 15, 460 (1997).