Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 132-143

  White, Daniela ^b   Beauchemin Jr , Bernard T ^a   Blakeney, Andrew J ^a   Steinhäusler, Thomas ^a  

^a Olin Microelectronic Materials   (United States)

^b PPG INDUSTRIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; PYROLYSIS; SILANES; TERPOLYMERS; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS;

193-NM LITHOGRAPHIES; BI-LAYER RESISTS; MICROENVIRONMENT; THERMAL DECOMPOSITIONS; THERMAL STABILITIES;

GROUP TECHNOLOGY;

EID: 24644438896     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312383     Document Type: Conference Paper

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