Effective masses of holes at GaAs-AlGaAs heterojunctions

Physical Review B

Volumn 31, Issue 2, 1985, Pages 888-892

  Broido, D A ^a   Sham, L J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24444456383     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.31.888     Document Type: Article

References (13)

1. Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.
2. Confined carrier quantum states in ultrathin semiconductor heterostructures